6
RF Device Data
Freescale Semiconductor
MRF7S18125AHR3 MRF7S18125AHSR3
TYPICAL CHARACTERISTICS
η
D,
DRAIN
EFFICIENCY (%)
η
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
15 53
Gps
18 59
VDD
= 28 Vdc
17.5
58
17
57
56
54
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 125 Watts CW
?13
?7
?9
?11
?19
16
55
?15
?17
ηD
1810
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout
= 57
Watts Avg.
Gps
17.5
0
60
IRL
17
50
40
16
= 1100 mA, EDGE Modulation
30
20
15
10
G
ps
, POWER GAIN (dB)
EVM
EVM, ERROR VECTOR
MAGNITUDE (% rms)
VDD
= 28 Vdc, P
out
= 57 W Avg.
IDQ
Pout, OUTPUT POWER (WATTS) CW
10 300100
13
18
IDQ
= 1650 mA
VDD
= 28 Vdc
f = 1840 MHz
17
15
14
Figure 5. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
16
825 mA
1375 mA
550 mA
Pout
= 125 W CW, I
DQ
= 1100 mA
100
?60
0
0.1 101
?20
?30
?40
?50
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
IM7?U
IM5?U
IM5?L
IM3?L
IM7?L
IM3?U
VDD
= 28 Vdc, P
out
= 125 W (PEP)
IDQ
= 1100 mA, Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
16.5
15.5
1820 1830 1840 1850 1860 1870 1880
16.5
15.5
14.5
1810 1820 1830 1840 1850 1860 1870 1880
IRL, INPUT RETURN LOSS (dB)
?13
?7
?9
?11
?19
?15
?17
1100 mA
?10
ηD
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